Piezoelectric doping in AlInGaN/GaN heterostructures
Identifieur interne : 013A04 ( Main/Repository ); précédent : 013A03; suivant : 013A05Piezoelectric doping in AlInGaN/GaN heterostructures
Auteurs : RBID : Pascal:99-0472745Descripteurs français
- Pascal (Inist)
- 7340K, 7765L, 7361E, 6172V, 7350D, 7350J, Etude expérimentale, Aluminium composé, Indium composé, Gallium composé, Hétérojonction semiconducteur, Matériau semiconducteur piézoélectrique, Semiconducteur III-V, Semiconducteur bande interdite large, Mobilité électron, Densité électron, Mobilité Hall, Dopage semiconducteur, Contrainte interne, Couche épitaxique semiconductrice, Gaz électron 2 dimensions, Polarisation diélectrique.
English descriptors
- KwdEn :
- Aluminium compounds, Dielectric polarization, Electron density, Electron mobility, Experimental study, Gallium compounds, Hall mobility, III-V semiconductors, Indium compounds, Internal stresses, Piezoelectric semiconductors, Semiconductor doping, Semiconductor epitaxial layers, Semiconductor heterojunctions, Two-dimensional electron gas, Wide band gap semiconductors.
Abstract
We report on the piezoelectric doping and two-dimensional (2D) electron mobility in AlInGaN/GaN heterostructures grown on 6H-SiC substrates. The contribution of piezoelectric doping to the sheet electron density was determined using an In-controlled built-in strain-modulation technique. Our results demonstrate that in strained AlGaN/GaN heterostructures, the piezoelectric field generates at least 50% of the 2D electrons. The strain modulation changes the potential distribution at the heterointerface, which, in turn, strongly affects the 2D electron mobility, especially at cryogenic temperatures. The obtained results demonstrate the potential of strain engineering and piezoelectric doping for GaN-based electronics. © 1999 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Piezoelectric doping in AlInGaN/GaN heterostructures</title><author><name sortKey="Khan, M Asif" uniqKey="Khan M">M. Asif Khan</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of ECE, University of South Carolina, Columbia, South Carolina 29208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>Department of ECE, University of South Carolina, Columbia</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Sensor Electronics Technology, Inc., Troy, New York 12110</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>Sensor Electronics Technology, Inc., Troy</wicri:cityArea></affiliation></author><author><name sortKey="Yang, J W" uniqKey="Yang J">J. W. Yang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of ECE, University of South Carolina, Columbia, South Carolina 29208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>Department of ECE, University of South Carolina, Columbia</wicri:cityArea></affiliation></author><author><name sortKey="Simin, G" uniqKey="Simin G">G. Simin</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of ECE, University of South Carolina, Columbia, South Carolina 29208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>Department of ECE, University of South Carolina, Columbia</wicri:cityArea></affiliation></author><author><name sortKey="Gaska, R" uniqKey="Gaska R">R. Gaska</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of ECE, University of South Carolina, Columbia, South Carolina 29208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>Department of ECE, University of South Carolina, Columbia</wicri:cityArea></affiliation></author><author><name sortKey="Shur, M S" uniqKey="Shur M">M. S. Shur</name></author><author><name sortKey="Bykhovski, A D" uniqKey="Bykhovski A">A. D. Bykhovski</name></author></titleStmt><publicationStmt><idno type="inist">99-0472745</idno><date when="1999-11-01">1999-11-01</date><idno type="stanalyst">PASCAL 99-0472745 AIP</idno><idno type="RBID">Pascal:99-0472745</idno><idno type="wicri:Area/Main/Corpus">014341</idno><idno type="wicri:Area/Main/Repository">013A04</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Dielectric polarization</term><term>Electron density</term><term>Electron mobility</term><term>Experimental study</term><term>Gallium compounds</term><term>Hall mobility</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Internal stresses</term><term>Piezoelectric semiconductors</term><term>Semiconductor doping</term><term>Semiconductor epitaxial layers</term><term>Semiconductor heterojunctions</term><term>Two-dimensional electron gas</term><term>Wide band gap semiconductors</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7340K</term><term>7765L</term><term>7361E</term><term>6172V</term><term>7350D</term><term>7350J</term><term>Etude expérimentale</term><term>Aluminium composé</term><term>Indium composé</term><term>Gallium composé</term><term>Hétérojonction semiconducteur</term><term>Matériau semiconducteur piézoélectrique</term><term>Semiconducteur III-V</term><term>Semiconducteur bande interdite large</term><term>Mobilité électron</term><term>Densité électron</term><term>Mobilité Hall</term><term>Dopage semiconducteur</term><term>Contrainte interne</term><term>Couche épitaxique semiconductrice</term><term>Gaz électron 2 dimensions</term><term>Polarisation diélectrique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report on the piezoelectric doping and two-dimensional (2D) electron mobility in AlInGaN/GaN heterostructures grown on 6H-SiC substrates. The contribution of piezoelectric doping to the sheet electron density was determined using an In-controlled built-in strain-modulation technique. Our results demonstrate that in strained AlGaN/GaN heterostructures, the piezoelectric field generates at least 50% of the 2D electrons. The strain modulation changes the potential distribution at the heterointerface, which, in turn, strongly affects the 2D electron mobility, especially at cryogenic temperatures. The obtained results demonstrate the potential of strain engineering and piezoelectric doping for GaN-based electronics. © 1999 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>75</s2></fA05><fA06><s2>18</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Piezoelectric doping in AlInGaN/GaN heterostructures</s1></fA08><fA11 i1="01" i2="1"><s1>KHAN (M. Asif)</s1></fA11><fA11 i1="02" i2="1"><s1>YANG (J. W.)</s1></fA11><fA11 i1="03" i2="1"><s1>SIMIN (G.)</s1></fA11><fA11 i1="04" i2="1"><s1>GASKA (R.)</s1></fA11><fA11 i1="05" i2="1"><s1>SHUR (M. S.)</s1></fA11><fA11 i1="06" i2="1"><s1>BYKHOVSKI (A. D.)</s1></fA11><fA14 i1="01"><s1>Department of ECE, University of South Carolina, Columbia, South Carolina 29208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Sensor Electronics Technology, Inc., Troy, New York 12110</s1></fA14><fA14 i1="03"><s1>Department of ECSE and CIEEM, Rensselaer Polytechnic Institute, Troy, New York 12180</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA20><s1>2806-2808</s1></fA20><fA21><s1>1999-11-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 1999 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>99-0472745</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We report on the piezoelectric doping and two-dimensional (2D) electron mobility in AlInGaN/GaN heterostructures grown on 6H-SiC substrates. The contribution of piezoelectric doping to the sheet electron density was determined using an In-controlled built-in strain-modulation technique. Our results demonstrate that in strained AlGaN/GaN heterostructures, the piezoelectric field generates at least 50% of the 2D electrons. The strain modulation changes the potential distribution at the heterointerface, which, in turn, strongly affects the 2D electron mobility, especially at cryogenic temperatures. 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